研究目的
Investigating the fabrication of small-area passivated contact n-type monoPolyTM silicon solar cells customized for tandem applications by scaling down from 6-inch full-size solar cells fabricated using industrial tools.
研究成果
The study demonstrated that small-area n-type monoPolyTM c-Si solar cells can be realized using conventional 6-inch c-Si wafers using industrial tools for tandem applications, achieving efficiencies of 33.0% and 33.4% under truncated AM1.5G spectra. An uncertified power conversion efficiency of 24.9% was achieved for the fabricated 4T perovskite/Si tandem solar cell, which is among the highest efficiencies reported for such configurations.
研究不足
The study mentions the challenges of upscaling perovskite top cells, such as uniformity and lateral conductance, and the significant open-circuit voltage and fill factor losses in small area cells obtained by laser cutting from 6-inch conventional cells due to edge recombination losses.
1：Experimental Design and Method Selection:
The study involves scaling down from 6-inch full-size solar cells to small-area cells using industrial tools.
2：Sample Selection and Data Sources:
3：3 cm2 (M2) n-type c-Si wafers (190 μm, 1-2 ?cm) were used. List of Experimental Equipment and Materials:
2 Low pressure chemical vapor deposition (LPCVD) for intrinsic polysilicon deposition, phosphorus diffusion tube furnace, I-V measurement tool with 21 LEDs as the light source (Wavelabs Sinus-220).
4：0). Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The process followed the monoPolyTM Si solar cells fabrication, with doped polysilicon layer achieved by intrinsic polysilicon deposition using LPCVD followed by phosphorus diffusion.
5：Data Analysis Methods:
I-V characteristics were obtained using an I-V measurement tool, simulating various arbitrary spectra to predict the performance of c-Si bottom cells under perovskite and GaAs top cells.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
