研究目的
Investigating the effects of γ radiation on GaN-based blue LEDs, focusing on current and 1/f noise degradations under low bias voltage.
研究成果
γ radiation causes defects in the space-charge region of LEDs, leading to increased current and 1/f noise under low bias voltage. The 1/f noise parameter is more sensitive than current, suggesting its potential use in evaluating the radiation resistance of GaN-based blue LEDs.
研究不足
The study focuses on low bias voltage conditions and does not explore the effects under high bias or different radiation types. The sensitivity of 1/f noise is highlighted, but practical application in space environments requires further validation.
1：Experimental Design and Method Selection:
GaN multiquantum-well blue LEDs were radiated with 60Co γ-rays for accumulated doses up to 2.5 Mrad (SiO2). The electrical parameters and noise signal were measured before and after radiation.
2：5 Mrad (SiO2). The electrical parameters and noise signal were measured before and after radiation.
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: The experimental devices are GaN multiquantum-well blue LEDs produced by a Taiwan electronics company.
3：List of Experimental Equipment and Materials:
HP4156 semiconductor parameter analyzer, PARC113 low noise amplifier, XD3020 noise measurement system based on virtual instrument.
4：Experimental Procedures and Operational Workflow:
Devices were radiated at room temperature with accumulated total doses. Electrical parameters and noise signals were measured post-radiation.
5：Data Analysis Methods:
The degradation mechanisms were analyzed using Hurkx’s trap-assisted tunneling model for current and quantum 1/f noise theory for noise.
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