研究目的
Investigating the performance of AlGaN-based deep ultraviolet laser diodes with convex quantum wells structure compared to conventional and convex quantum barriers structures.
研究成果
The convex quantum wells structure significantly improves radiation recombination efficiency, hole injection efficiency, and reduces electron leakage, leading to better performance in terms of carrier concentration, output power, and threshold current compared to conventional and convex quantum barriers structures.
研究不足
The study is based on simulation results, which may not fully capture real-world fabrication and operational challenges. The assumption of 40% polarization charge blocking may also affect the accuracy of the results.
1：Experimental Design and Method Selection:
The study uses Crosslight's Lastip for simulation to compare three types of device structures: a reference structure with conventional MQWs, a convex quantum barriers structure, and a convex quantum wells structure.
2：Sample Selection and Data Sources:
The structures are designed with the same average Al mole fraction to ensure comparable emission wavelengths.
3：List of Experimental Equipment and Materials:
The simulation involves a laser with specific dimensions and settings, including cavity length, mirror reflectivity, and background conditions.
4：Experimental Procedures and Operational Workflow:
The simulation environment is set to room temperature, with assumptions about polarization charge blocking.
5：Data Analysis Methods:
The study analyzes optical confinement factor, carrier concentration, energy band, radiation recombination rate, material gain, laser output power, threshold current, and threshold voltage.
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