1：Experimental Design and Method Selection:

The study involved growing InGaP/GaAs DJSC structures by metalorganic chemical vapor deposition (MOCVD) with tunnel junctions grown at different rates (1.0 and 1.5 ?/s). Temperature- and excitation power-dependent photoluminescence (PL) measurements were conducted to analyze the optical properties.

2：0 and 5 ?/s). Temperature- and excitation power-dependent photoluminescence (PL) measurements were conducted to analyze the optical properties. Sample Selection and Data Sources:

2. Sample Selection and Data Sources: The samples were grown on p-GaAs substrates with 6° off-cut toward the (111)A plane. The structures included an InGaP top cell and a GaAs bottom cell interconnected with a p++-Al0.3Ga0.7As/n++-GaAs tunnel junction.

3：3Ga7As/n++-GaAs tunnel junction. List of Experimental Equipment and Materials:

3. List of Experimental Equipment and Materials: A diode-pumped solid-state laser (λ = 532 nm) was used for excitation, and the PL signal was collected with a charge-coupled device detector. Carbon tetra-bromide (CBr4) and diethyltelluride (DETe) were used as dopants.

4：Experimental Procedures and Operational Workflow:

The samples were placed in a closed-cycle helium cryostat for PL measurements at temperatures ranging from 10 to 300 K. The excitation laser power was adjusted from 2.5 to 250 mW using neutral density filters.

5：5 to 250 mW using neutral density filters. Data Analysis Methods:

5. Data Analysis Methods: The PL spectra were analyzed to determine the emission peaks and their origins. The power-conversion efficiency (PCE) of the solar cells was measured under AM 1.5G, 1 sun illumination.