1：Experimental Design and Method Selection:

The study involved simulation using Nextnano software to evaluate strain, energy band profile, and electron-hole wave-function of the structures. The band parameters for simulation were taken from Vurgaftman et al. It involves self-consistent solution of Poisson and multi-band Schrodinger equations to compute the electronic structure along with electron and hole eigenstates. The strain is evaluated based on the continuum elasticity approach, including deformation potential and piezoelectric field.

2：Sample Selection and Data Sources:

The simulation was carried out in a rectangular area with a size of 50 × 50 × 100 nm in x-, y-, and z-directions. The simulation space was divided into N grid points with spacing of

3：5 nm and 25 nm in lateral (x-, y-direction) and growth (z-direction) direction respectively. List of Experimental Equipment and Materials:

Nextnano software was used for simulation.

4：Experimental Procedures and Operational Workflow:

The study compared simulated and experimental PL peak positions with various barrier thicknesses. The sample with

5：5 nm barrier thickness facilitated enhanced performance in terms of inter-dot carrier tunnelling, thermal stability, and enhanced quantum efficiency. Data Analysis Methods:

The study analyzed the impact of different configurations on the hydrostatic and biaxial strain profile as well as carrier localization.