研究目的
Demonstrating an ultra-compact semiconductor laser with type-II gallium antimonide/gallium arsenide quantum rings (GaSb/GaAs QRs) as the gain medium, utilizing a high quality photonic crystal circular nanobeam cavity.
研究成果
The study successfully demonstrated a PhC circular nanobeam laser based on type-II GaSb/GaAs QRs, showing a high characteristic temperature of 114 K and suitability for photonic integrated circuit and bio-detection applications. The long-lived emission from GaSb/GaAs QRs and the design of the PhC cavity contributed to the observed lasing performances.
研究不足
The study was conducted at a low temperature of 80 K, and the lasing performances from the type-II GaSb/GaAs QRs are relatively less efficient compared to type-I III-V gain materials due to the type-II band alignment.
1：Experimental Design and Method Selection:
The study utilized a high-quality photonic crystal circular nanobeam cavity with GaSb/GaAs QRs as the gain medium. The design aimed to achieve a small modal volume and significant coupling with photons emitted by QRs.
2：Sample Selection and Data Sources:
The epitaxial wafer of GaSb/GaAs QRs with a peak emission wavelength at approximately 1 μm was prepared. PL and TRPL measurements were conducted on the unprocessed wafer before fabricating the PhC circular nanobeam cavity.
3：List of Experimental Equipment and Materials:
The fabrication involved electron beam lithography, dry-etching steps using CHF3/O2 and Ar/SiCl4 gases, and wet-etching with HF solution. Optical characterization was performed using a home-built micro-PL system equipped with a cryostat, an 850 nm diode laser, and an optical spectrum analyzer.
4：Experimental Procedures and Operational Workflow:
The PhC circular nanobeam cavities were fabricated on the epitaxial wafer. The optical characteristics were investigated through PL and TRPL measurements. The lasing action was observed under optical pumping at 80 K.
5：Data Analysis Methods:
The field distribution of the lasing mode was computed with 3D-FEM. The Purcell effect was investigated through TRPL measurements after fabrication. The temperature dependency of lasing threshold was analyzed to determine the characteristic temperature.
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