研究目的
Investigating the effect of a new n-type confinement layer with stepped and super-lattice structure on the performance of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs).
研究成果
The DUV LED with a stepped and super-lattice n-type confinement layer significantly enhances IQE and LOP by reducing electrostatic fields in the QWs, increasing carrier concentrations, and improving carrier overlaps and radiative recombination rate.
研究不足
The study is based on simulation results, which may not fully capture all real-world performance factors of DUV LEDs. The maximum IQE achieved with the new structure is still lower than that of InGaN-based LEDs, indicating room for further improvement.
1：Experimental Design and Method Selection:
The study uses simulation to compare the performance of DUV LEDs with conventional and new n-type confinement layers. The new structure employs stepped and super-lattice configurations to enhance carrier confinement in quantum wells.
2：Sample Selection and Data Sources:
Five DUV LED structures (S-1 to S-5) are simulated, with S-1 being the conventional structure and S-2 to S-5 incorporating variations of the new n-type confinement layer.
3：List of Experimental Equipment and Materials:
The simulation is performed using the Advance Physical Model of Semiconductor Devices programs (APSYS 2009) of Crosslight Software Inc.
4：Experimental Procedures and Operational Workflow:
The photoelectric characteristics of all LEDs are calculated under set conditions, including Shockley-Read-Hall recombination time, auger recombination, background loss, operating temperature, and light extraction efficiency.
5：Data Analysis Methods:
The performance metrics analyzed include light output power (LOP), internal quantum efficiency (IQE), external quantum efficiency (EQE), and radiative recombination rate.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
