研究目的
To develop a low-temperature method for fabricating high-quality CsPbI2Br perovskite films for efficient and stable all-inorganic perovskite solar cells.
研究成果
The VCG method effectively controls the crystallization of CsPbI2Br perovskite films at lower temperatures, resulting in high-quality films with larger grain size and low defect density. The introduction of PEIE as an interlayer improves charge extraction and suppresses carrier recombination, leading to a PCE of 12.32%. The unencapsulated PSCs show outstanding stability, retaining over 95% of initial PCE after 1000h in N2 glove-box.
研究不足
The study focuses on CsPbI2Br perovskite solar cells and may not be directly applicable to other perovskite compositions. The VCG method requires precise control of vacuum conditions.
1:Experimental Design and Method Selection:
A vacuum-controlled growth (VCG) method was used to control the crystallization of CsPbI2Br perovskite films at lower temperatures. Polyethyleneimine (PEIE) was introduced as an interlayer to improve charge extraction and suppress carrier recombination.
2:Sample Selection and Data Sources:
CsPbI2Br perovskite films were prepared and characterized. The films were subjected to VCG treatment and PEIE modification.
3:List of Experimental Equipment and Materials:
The materials used include CsPbI2Br perovskite, polyethyleneimine (PEIE), and other standard materials for solar cell fabrication.
4:Experimental Procedures and Operational Workflow:
The precursor films were deposited on substrates and subjected to VCG treatment. The films were then annealed at low temperatures. PEIE was introduced as an interlayer to modify the interface.
5:Data Analysis Methods:
The films were characterized using UV-vis absorption, photoluminescence (PL), time-resolved PL (TRPL), and other standard techniques to evaluate their quality and performance.
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