研究目的
To demonstrate terahertz time-domain spectroscopy (THz-TDS) as a method to probe the interaction-induced Fermi velocity renormalization in graphene and to quantitatively extract electrical parameters of large-scale graphene films on arbitrary substrates.
研究成果
THz-TDS is an effective method for probing Fermi velocity renormalization in graphene and extracting electrical parameters. The method is particularly useful for graphene on low permittivity substrates, where renormalization effects are significant even at high carrier densities.
研究不足
The study is limited to substrates with low relative permittivity (< 5) and does not explore the effects of high permittivity substrates in detail. The accuracy of the method depends on the homogeneity of the graphene films.
1：Experimental Design and Method Selection:
THz-TDS was used to measure the frequency-dependent sheet conductivity of graphene. The Drude model was fitted to the experimental data to extract DC conductivity and carrier scattering time.
2：Sample Selection and Data Sources:
Graphene samples were prepared by chemical vapor deposition (CVD) on copper foil and transferred onto flexible polymer substrates (PEN, PET) and SiO2/Si substrates.
3：List of Experimental Equipment and Materials:
Custom-built ultra-broadband THz spectrometer, commercial fiber-coupled broadband spectrometer, polymeric substrates (PEN, PET), SiO2/Si substrates.
4：Experimental Procedures and Operational Workflow:
THz-TDS measurements were performed in transmission-mode. The conductivity spectra were analyzed to extract electrical parameters by accounting for Fermi velocity renormalization.
5：Data Analysis Methods:
The Drude model was fitted to the conductivity spectra to extract σDC and τ. Carrier density and mobility were calculated using the renormalized Fermi velocity.
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