研究目的
Investigating the effect of electron leakage on efficiency droop in AlxGa(1?x)N/GaN ultraviolet LEDs under the influence of polarization charges on carrier concentrations.
研究成果
The research concludes that electron leakage significantly contributes to efficiency droop in AlxGa(1?x)N/GaN UV LEDs, with higher leakage parameters leading to increased leakage current and reduced IQE. Minimizing polarization effects is suggested to reduce efficiency droop.
研究不足
The study is based on theoretical modeling and computational analysis, which may not fully capture all practical aspects of LED performance under real-world conditions. The effect of other non-radiative recombination mechanisms besides electron leakage is not deeply explored.
