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Influence of Sn2+ ion on structural, morphological and optical characteristics of Cd0.9a??xZn0.1SnxS (0a??a?¤a??xa??a?¤a??0.06) quantum dots

DOI:10.1007/s12648-020-01735-1 期刊:Indian Journal of Physics 出版年份:2020 更新时间:2025-09-23 15:21:01
摘要: Water-soluble Cd0.9-xZn0.1SnxS (0 B x B 0.06) quantum dots were prepared by dual doping of Sn and Zn via chemical co-precipitation technique. XRD results con?rmed the cubic structure of CdS crystallites without generating any secondary peaks due to doping. TEM analysis revealed the structural information of the Sn-doped CdS host. The Sn substitution enhanced the particle size lightly. The surface morphological study revealed that the agglomeration of the samples was decreased. From UV–visible optical study, it was observed that the optical transmittance was suppressed owing to Sn substitution. Absorption peaks were blueshifted, and band gap values were widened due to incorporation of Sn. The strong PL emission peaks were received at 400 nm-1 and weak peaks near 490 nm-1. The peaks originated near the UV region were due to sulfur vacancies on the surface. EDX and FTIR studies con?rmed the presence of Sn in the prepared samples. Since the possibility of tailoring the band gap toward a high energy gap, these materials composition may be selected for optoelectronic device fabrication.
作者: I Devadoss,P Sakthivel,S Pauline Sheeba
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Investigating the influence of Sn2+ ion on structural, morphological and optical characteristics of Cd0.92xZn0.1SnxS (0 £ x £ 0.06) quantum dots for optoelectronic device fabrication.

Cd0.9-xZn0.1SnxS (0 B x B 0.06) QDs exhibited cubic structure with increased particle size due to Sn substitution. UV–visible absorption peak intensity increased, and blueshift was observed in band gap values. PL emissions near 400 nm and 495 nm were attributed to surface defects. These materials are suitable candidates for optoelectronic device fabrication.

The study is limited to the synthesis and characterization of Sn, Zn-dual-doped CdS QDs via chemical co-precipitation technique. The potential for optimization in synthesis parameters and application in devices beyond optoelectronics is not explored.

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