研究目的
Investigating the influence of Sn2+ ion on structural, morphological and optical characteristics of Cd0.92xZn0.1SnxS (0 £ x £ 0.06) quantum dots for optoelectronic device fabrication.
研究成果
Cd0.9-xZn0.1SnxS (0 B x B 0.06) QDs exhibited cubic structure with increased particle size due to Sn substitution. UV–visible absorption peak intensity increased, and blueshift was observed in band gap values. PL emissions near 400 nm and 495 nm were attributed to surface defects. These materials are suitable candidates for optoelectronic device fabrication.
研究不足
The study is limited to the synthesis and characterization of Sn, Zn-dual-doped CdS QDs via chemical co-precipitation technique. The potential for optimization in synthesis parameters and application in devices beyond optoelectronics is not explored.
1:Experimental Design and Method Selection:
The Cd
2:9-xZn1SnxS (0 B x B 06) QDs were synthesized via chemical co-precipitation technique using cadmium acetate, zinc acetate, sodium sulfide, and tin chloride as source materials. Sample Selection and Data Sources:
Ultra-pure deionized water was used as a solvent. All chemicals were of analytical grade with
3:99% purity. List of Experimental Equipment and Materials:
Magnetic stirrer, microwave oven, RigaKuC/max-2500 diffractometer, Philips CM200 transmission electron microscope, JEOLJSM 6390 scanning electron microscope, UV–visible spectrometer (Model: lambda 35, Make: PerkinElmer), FTIR spectrometer (Model: Perkin Elmer, Make: Spectrum RXI), fluorescence spectrometer (Model: Hitachi, Make: F-2500).
4:0). Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Solutions were prepared, stirred, and mixed under continuous stirring. The pH was maintained at
5:The precipitate was filtered, washed, dried, and crushed to get nanopowder. Data Analysis Methods:
XRD patterns were recorded, TEM and SEM analyses were carried out, UV–visible spectroscopic study was performed, and PL behavior was examined.
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