摘要： We investigate the impact of the insertion of a semiconductor defect on the transmittance spectrum of a one-dimensional photonic crystal composed by alternating layers of superconducting materials. We report that the effect of the insertion of the semiconductor defect originates a defective mode in the photonic band gap that exhibits a shift towards long-wavelength regimes. Unexpectedly, for high values of temperatures, it is observed that the defective mode reduces its confinement as well as influences the optical response of the photonic crystal rather than the pressure. We also extend our analysis to the case of two coupled defects of GaAs, and it is studied the effect of the relative distance between these two defects. Our numerical results reveal that the defective mode has a significant reduction in its quality factor as well as it displays an asymmetry in the transmittance spectrum when the defects are close to each other.