摘要： Understanding the factors that limit the performance of perovskite solar cells (PSCs) can be enriched by detailed temperature (T)-dependent studies. Based on p-i-n type PSCs with prototype methylammonium lead triiodide (MAPbI3) perovskite absorbers, T-dependent photovoltaic properties are explored and negative T-coefficients for the three device parameters (VOC, JSC, and FF) are observed within a wide low T-range, leading to a maximum power conversion efficiency (PCE) of 21.4% with an impressive fill factor (FF) approaching 82% at 220 K. These T-behaviors are explained by the enhanced interfacial charge transfer, reduced charge trapping with suppressed nonradiative recombination and narrowed optical bandgap at lower T. By comparing the T-dependent device behaviors based on MAPbI3 devices containing a PASP passivation layer, enhanced PCE at room temperature is observed but different tendencies showing attenuating T-dependencies of JSC and FF, which eventually leads to nearly T-invariable PCEs. These results indicate that charge extraction with the utilized all-organic charge transporting layers is not a limiting factor for low-T device operation, meanwhile the trap passivation layer of choice can play a role in the T-dependent photovoltaic properties and thus needs to be considered for PSCs operating in a temperature-variable environment.