研究目的
Development of a new resist material for extreme ultraviolet laser photolithography (EUVL) system, focusing on the synthesis and properties of tellurium-containing polymers.
研究成果
The synthesized poly(Re-co-Te)-AD shows potential as a high-resolution EUV resist material, with good physical and resist properties. Further studies are needed to evaluate its etching durability and patterning properties.
研究不足
The study focuses on the synthesis and preliminary evaluation of tellurium-containing polymers for EUVL resist materials, with etching durability and patterning properties under further investigation.
1：Experimental Design and Method Selection:
Condensation reaction of resorcinol and tellurium tetrachloride, followed by reaction with adamantyl bromo acetate.
2：Sample Selection and Data Sources:
Resorcinol and tellurium tetrachloride as starting materials.
3：List of Experimental Equipment and Materials:
SEC for molecular weight estimation, IR and 1H NMR spectroscopy for structure confirmation, TGA for thermal stability.
4：Experimental Procedures and Operational Workflow:
Synthesis in ethyl acetate or DMF, spin-coating for film formation, exposure to EUV light.
5：Data Analysis Methods:
Ellipsometry for thickness measurement, QMS for out-gassing analysis.
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