研究目的
Investigating the fabrication of silicon nanowires (SiNWs) by silver (Ag) metal-assisted chemical etching (MACE) method and their optical properties.
研究成果
Vertically aligned n-type SiNWs with sizes from 100 to 200 nm were successfully fabricated using the MACE method at room temperature. The optical properties of the materials were not significantly influenced by the etching condition, but the PL intensity depended on the metal catalyst networks. The results provide supplemental understanding in the SiNWs fabrication process for application orientation, especially in new-structure Si-based solar cells and lithium-ion battery anodes.
研究不足
The study focuses on the fabrication and optical properties of SiNWs prepared by the MACE method using Ag particles as the catalytic metal. The influence of other catalytic metals or different etching conditions is not explored.
1：Experimental Design and Method Selection:
The MACE method was utilized to prepare monocrystalline silicon nanowires (SiNWs).
2：Sample Selection and Data Sources:
Square 1 cm × 1 cm cutting pieces of (100)-oriented mono-crystalline n-type, doped with phosphorus (P), with the resistivity from 1 ÷ 10 Ω×cm Czochralski (CZ) Si wafers were selected for sample preparation.
3：List of Experimental Equipment and Materials:
JEOL JSM-7600F field emission scanning electron microscope (SEM) equipped with the Oxford Instruments X-MAX EDS detector, Nexus 670 ThermoNicolet Fourier Transform Infrared Spectrometer, SpectraPhysics CCD camera, Kimmon He-Cd laser.
4：Experimental Procedures and Operational Workflow:
The Si wafers were washed and cleaned, then immersed in HF and AgNO3 solution mixture for 1 min. The samples were then etched in a mixture of HF (
5：8 M) and H2O2 (4 M) to form SiNWs. Data Analysis Methods:
The morphology and composition of the samples were characterized using back-scattered electron (BSE) images and energy-dispersive x-ray spectroscopy (EDS). The infrared absorption spectra of the samples were analyzed using Fourier-transform infrared spectroscopy (FT-IR). The photoluminescence (PL) spectra of SiNWs were recorded.
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