研究目的
Investigating the growth and characterization of InN quantum dots (QDs) by metalorganic chemical vapor deposition (MOCVD) for potential applications in infrared emitters and multilayer QD devices.
研究成果
InN QDs were successfully grown with densities varying between 4 × 10^8 and 4 × 10^10 cm^-2, exhibiting room-temperature PL with wavelengths from 1100 to >1550 nm. Capping InN QDs with GaN slightly increased PL intensity and slightly decreased wavelength, suggesting potential for incorporating InN dots in device structures. However, challenges remain in planarizing InN dots for further device layer deposition.
研究不足
The study faced challenges in capping InN QDs with GaN without losing luminescence, indicating difficulties in planarizing InN dots prior to further device layer deposition. Additionally, the PL detector's sensitivity was significantly lower at wavelengths >1550 nm, limiting the observation of bulk InN emission.
1：Experimental Design and Method Selection:
InN QDs were grown by MOCVD on metal-polar, c-plane GaN-on-sapphire base layers, with and without low-temperature GaN caps. The study varied growth temperatures and times to analyze their effects on QD properties.
2：Sample Selection and Data Sources:
Samples were deposited on sapphire substrates using a two-flow MOCVD reactor at atmospheric pressure. InN was deposited at temperatures between 500 and 600 °C directly after GaN layer growth.
3：List of Experimental Equipment and Materials:
MOCVD reactor, AFM (Asylum MFP-3D), XRD (Panalytical MRD PRO), spectroscopic ellipsometry (Woolam Spectroscopic Ellipsometer, M-2000DI), and PL measurement setup with a 780-nm laser source and InGaAs detector.
4：Experimental Procedures and Operational Workflow:
InN QDs were grown under varying conditions, followed by AFM, XRD, and PL measurements to characterize their morphology, structure, and optical properties.
5：Data Analysis Methods:
Dot densities, widths, and heights were determined using AFM software. XRD scans were simulated to determine GaN cap layer thicknesses. PL spectra were analyzed for peak wavelengths and intensities.
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