研究目的
Investigating the evolution of different phases of the Fe-Si binary system through high energy mechanical attrition and subsequent annealing to achieve a clean semiconducting β-FeSi2 phase.
研究成果
The study successfully demonstrated the formation of a clean semiconducting β-FeSi2 phase through high energy mechanical attrition of Fe and Si powders for 50 minutes followed by annealing at 800 °C. This method offers a promising route for the bulk production of β-FeSi2 for optoelectronic applications.
研究不足
The study is limited by the potential for oxidation during milling and the need for precise control over milling and annealing conditions to achieve the desired β-FeSi2 phase.
1：Experimental Design and Method Selection:
The study involved ball milling of Fe and Si powders in a planetary ball mill under argon atmosphere at 1000 rpm, followed by annealing at 500 and 800 °C.
2：Sample Selection and Data Sources:
Elemental Fe and Si powders of 99% purity were used in a mass ratio of 3:
3：List of Experimental Equipment and Materials:
A planetary ball mill (Fritsch, Germany, model: Pulverisette 7 Premium Line), tungsten carbide bowl and balls, and a Bruker D8 Advance x-ray diffractometer were used.
4：Experimental Procedures and Operational Workflow:
The powders were milled for durations up to 60 minutes, with samples taken at intervals for analysis. Annealing was performed in vacuum.
5：Data Analysis Methods:
XRD patterns were analyzed using the Debye-Scherrer formula for particle size estimation. M?ssbauer spectra were fitted using Lorentzian line shapes to identify phases and their relative abundances.
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