研究目的
Investigating the impact of fixed charge density (NF) and thickness of aluminum oxide tunnel insulators on Schottky barrier height ΦB in metal–insulator–semiconductor (MIS) diodes.
研究成果
The study concludes that the well-known NF at alumina–silicon interfaces does not affect ΦB in tunnel-active MIS structures, suggesting instead that dipoles are responsible for the observed ΦB versus alumina thickness trend. This understanding is crucial for designing tunnel devices where control of ΦB is essential.
研究不足
The study found no discernable effect of NF in diodes with alumina thicknesses below 2 nm, contrary to expectations. The role of fixed charge at alumina–silicon interfaces in affecting ΦB was not observed, suggesting limitations in the electrostatic model's applicability to tunnel-active MIS structures.
1：Experimental Design and Method Selection:
The study involved fabricating MIS diodes and MOSCAPs on (100) p-Si, with Al2O3 deposited via thermal ALD. Samples were either annealed or left as-deposited.
2：Sample Selection and Data Sources:
Silicon wafers were cleaned and etched before ALD deposition.
3：List of Experimental Equipment and Materials:
Al back contacts were deposited via thermal evaporation, and Al2O3 was deposited using trimethylaluminum (TMA) and H2O in an Ultratech Cambridge Nanotech S
4：Experimental Procedures and Operational Workflow:
1 Schottky barrier devices were fabricated with varying ALD cycles, and half were annealed. Impedance analysis was performed using a HP4194A gain-phase analyzer, and direct current measurements with a Keithley 2450 source measure unit.
5：Data Analysis Methods:
Mott–Schottky analysis was used for ΦB quantification, and XPS measurements were conducted for compositional analysis.
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