研究目的
Investigating the effect of annealing on the structural, compositional, morphological, and optical properties of thermally evaporated In2S3 thin films.
研究成果
Annealing In2S3 thin films in sulfur ambient improves their structural and optical properties, making them suitable as window/buffer layers in environmentally benign polycrystalline thin film solar cells. Films annealed at 250 °C exhibited optimal properties.
研究不足
The study is limited to the effects of annealing in sulfur ambient on In2S3 thin films prepared by thermal evaporation. The range of annealing temperatures is from 200 °C to 300 °C. The study does not explore the effects of other annealing atmospheres or deposition techniques.
1：Experimental Design and Method Selection:
In2S3 thin films were grown by thermal evaporation technique at a constant substrate temperature of 300 °C on ultrasonically cleaned soda lime glass substrates. The as-grown films were annealed in sulfur ambient at various temperatures.
2：Sample Selection and Data Sources:
The films were characterized using grazing incident X-ray diffraction (GIXD), scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS), conventional optical spectroscopy, and surface photovoltage (SPV) spectroscopy.
3：List of Experimental Equipment and Materials:
Thermal evaporation system (HHV BC300 model), Ultima IV X-ray diffractometer (Rigaku), Hitachi S-806 scanning electron microscope (SEM), Photon RT spectrophotometer (Essent Optics).
4：Experimental Procedures and Operational Workflow:
The films were annealed at temperatures ranging from 200 °C to 300 °C for 1 hour. Structural, morphological, and optical properties were analyzed post-annealing.
5：Data Analysis Methods:
The optical absorption coefficient and energy band gap were calculated using transmission and reflection spectra. SPV signal was measured to determine the type of conductivity and optical properties.
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