研究目的
Investigating the novel electrode-free local anodic oxidation (EFLAO) technique for in-situ patterning of low-dimensional materials and heterostructures with high precision and flexibility.
研究成果
The electrode-free LAO technique enables high-quality, in-situ patterning of low-dimensional materials and heterostructures without the need for pre-fabricated micro-electrodes. It offers a simple and efficient method for fabricating ultraclean nanoscale devices with great flexibility.
研究不足
The technique requires specific environmental conditions (RH between 40~75%) and a high-frequency AC voltage (>10 kHz) for optimal performance. The etching quality and success rate are highly dependent on these parameters.
1:Experimental Design and Method Selection:
The EFLAO technique was performed on a standard atomic force microscope (AFM) platform in atmosphere. A high frequency (40 kHz) AC voltage was applied between a gold-coated AFM tip and the conductive Si layer of the substrate. The tip slowly approached the sample and then scanned along a designed path to achieve controlled nano-etching.
2:Sample Selection and Data Sources:
Monolayer graphene, hexagonal boron nitride (hBN), and carbon nanotubes (CNTs) on insulating substrates were used.
3:List of Experimental Equipment and Materials:
AFM with a gold-coated tip, SiO2/Si substrates, graphene, hBN, and CNTs.
4:Experimental Procedures and Operational Workflow:
The tip was operated in contact mode with a lift-down force of ~1500nN, moving at a velocity of 1~4 μm/s during etching. The relative humidity (RH) was maintained between 40~75%.
5:5%. Data Analysis Methods:
5. Data Analysis Methods: The success rate of etching and the amount of residues were statistically analyzed to evaluate the etching quality.
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