1：Experimental Design and Method Selection:

Tungsten-doped titanium dioxide (W-TiO2) thin films were prepared by sputtering thermally oxidized W-doped titanium films in air using a DC and RF magnetron cosputtering system. The effects of annealing treatment and W content on the W-TiO2 film microstructure were investigated.

2：Sample Selection and Data Sources:

Pure and W-Ti films were deposited onto (001) Si wafers and glass at room temperature. The samples were then annealed (thermal oxidation) in air at temperatures of 450, 500, 550, and 600 °C.

3：List of Experimental Equipment and Materials:

Titanium and tungsten disks with a diameter of 76.2 mm were used as targets. The sputtering chamber was evacuated to a background pressure of 5 × 10?7 Torr using a cryopump. Argon gas with a purity of 99.999% was used.

4：2 mm were used as targets. The sputtering chamber was evacuated to a background pressure of 5 × 10?7 Torr using a cryopump. Argon gas with a purity of 999% was used. Experimental Procedures and Operational Workflow:

4. Experimental Procedures and Operational Workflow: The samples were annealed in air at temperatures of 450, 500, 550, and 600 °C for 6 h. The heating rate was 5 °C/min.

5：Data Analysis Methods:

Film crystallinity was analyzed by X-ray diffraction (XRD). Microstructural and thickness observations were analyzed by field-emission scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM). The photocatalytic activity was determined with methylene blue (MB) decomposition solution.