研究目的
Investigating the annealing temperature-dependent optical properties of electron beam evaporated ZnSe thin films.
研究成果
The study concluded that annealing temperature significantly affects the optical properties of ZnSe thin films, including refractive index, thickness, and optical band gap. The findings are beneficial for applications in optoelectronics.
研究不足
The study focuses on the effect of annealing temperature on optical properties, but other factors like deposition rate and substrate type may also influence the results.
1：Experimental Design and Method Selection:
ZnSe thin films were deposited by electron beam evaporation technique and annealed at different temperatures in a nitrogen environment. Structural analysis was performed by X-ray diffraction, and optical properties were evaluated through transmission spectrum analysis.
2：Sample Selection and Data Sources:
High-purity ZnSe particles were used as starting material. Both N-type silicon and quartz substrates were used for the deposition of thin films.
3：List of Experimental Equipment and Materials:
E-beam evaporation equipment (EVA450, Alliance Concept), high-purity ZnSe particles (99.99%, Loyal Target Technology), X-ray diffraction (Bruker D8 ADVANCE), UV-vis-NIR scanning spectrophotometer (UV-3101PC).
4：99%, Loyal Target Technology), X-ray diffraction (Bruker D8 ADVANCE), UV-vis-NIR scanning spectrophotometer (UV-3101PC).
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The ZnSe thin films were deposited, annealed at various temperatures, and then characterized for structural and optical properties.
5：Data Analysis Methods:
Swanepoel's envelope method for optical parameters, Wemple-DiDomenico single oscillator model for dispersion parameters.
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