研究目的
Investigating the effect of growth pressure and temperature during the film deposition on the crystallization and dielectric behaviour of the BST films.
研究成果
BST thin films with high degree of texturing and prominent dielectric properties provide an efficient platform for the fabrication of tunable microwave resonators. The BST thin film deposited at 1.33 × 10?4 bar and 800 °C substrate temperature exhibits high dielectric constant (≈475) with 65% tunability.
研究不足
The study is limited to the effects of growth pressure and temperature on the structural and dielectric properties of BST thin films. The potential areas for optimization include further investigation into the effects of other deposition parameters and the application of BST thin films in more diverse electronic devices.
1：Experimental Design and Method Selection:
Pulsed laser deposition (PLD) technique was used for the deposition of BST thin films. The effect of varying deposition pressure and substrate temperature was studied on the structural and electrical properties of BST thin films.
2：Sample Selection and Data Sources:
Stoichiometric BST target was prepared using solid state reaction method. Barium Titanate and Strontium Titanate in 1:1 ratio were used as the starting materials.
3：List of Experimental Equipment and Materials:
Excimer laser (Coherent:Complex Pro 102 F), thickness profiler (Make:Vecco; Model:Dektek 150), X-Ray Diffraction (XRD; Make: Rigaku, Model: Ultima IV), Scanning Electron Microscopy (SEM; Make: Tescan, Model: Mira III), semiconductor characterization unit (Make:Keithley, Model:4200 SCS).
4：Experimental Procedures and Operational Workflow:
Thin film of BST were deposited over the platinised silicon substrates by varying processing oxygen pressure and substrate temperature. The thickness of the BST thin film was measured using thickness profiler.
5：Data Analysis Methods:
The films were characterized structurally using XRD and morphology was monitored using SEM. The dielectric measurements were performed in MSM configuration using semiconductor characterization unit.
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