研究目的
To show how to reduce the harmful phenomenon of type 'punch-through' in AlGaN/GaN/Si high electron mobility transistors (HEMTs) due to the weak confinement of electrons in the channel.
研究成果
The incorporation of ultrathin BGaN layer back-barriers drastically improves the electron confinement in standard AlGaN/GaN HEMTs, significantly enhancing the DC and RF performances of the transistors. These improvements make the new device a good candidate for microwave power applications.
研究不足
The physical properties of the BGaN material system remain partially unknown for a high boron concentration, restricting simulations to a maximum boron concentration of 2%.
