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Electronic properties of graphene with point defects

DOI:10.1063/1.5060964 期刊:Low Temperature Physics 出版年份:2018 更新时间:2025-09-23 15:21:21
摘要: This article attempts a point-by-point review of the electron spectrum of graphene containing defects (adsorbed atoms, substitutional atoms, vacancies) that can be adequately described within the Lifshitz model. In this regard, the known Hamiltonian for this model is calculated for the case of two-dimensional relativistic electrons, and the criteria for occurrence of an impurity resonance near a Dirac point are given. The theory of concentration band structure transformation of graphene is presented, from which it follows that a transport gap is opened upon reaching a strictly defined value of impurity concentration in the neighborhood of the energy of impurity resonance. At the same time, the question of the possibility (or impossibility) of localization in such a {spatially disordered system} of Dirac quasiparticles is analyzed. Based on this, it is possible to provide an explanation and present a description of a phenomenon recently observed in {impure graphene}, the metal-dielectric transition that appears as a direct consequence of the decrease of the Fermi energy of the system in the region of a transport gap. The concept of local spectrum rearrangement of graphene, which also occurs during the process of increased concentration of defects in it, is introduced and substantiated. Physical reasons are formulated, by which the position of the minimum of the low-temperature conductivity of graphene as a function of the Fermi energy of electrons corresponds to the impurity resonance energy rather than to the Dirac point, as has been validated in a number of theoretical and test studies. Here, it appears that the minimum value is not a universal magnitude, but depends on the concentration of defects. Analytical examination of impurity effects is accompanied by numerical modeling of the system under study, as a result of which complete correspondence has been established between these two approaches. In particular, the overall picture of spectrum rearrangement, localization of electron states, and also the effects having local nature are confirmed.
作者: Y. V. Skrypnyk,V. M. Loktev
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Investigating the electronic properties of graphene containing point defects (adsorbed atoms, substitutional atoms, vacancies) within the Lifshitz model, focusing on the electron spectrum transformation, impurity resonance near Dirac points, and the metal-dielectric transition.

The study concludes that point defects in graphene can lead to significant changes in its electronic properties, including the formation of impurity resonances near Dirac points, opening of transport gaps, and metal-dielectric transitions. The minimum conductivity is found to depend on the concentration of defects, challenging the notion of its universality.

The study is theoretical, focusing on the Lifshitz model for point defects in graphene. It does not account for all types of defects or interactions, and the numerical modeling may not capture all real-world complexities of graphene with defects.

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