研究目的
Investigating the intrinsic carrier transport behavior of 2D organolead halide perovskites based on phase-pure homologous single crystals.
研究成果
The intrinsic carrier transport behavior of 2D organolead halide hybrid perovskites is strongly dependent on the number of inorganic perovskite layers (n). The carrier mobility increases with the ratio of inorganic perovskite slabs to organic spacers. The origin of the carrier mobility dependence on the phase transition for 2D perovskites differs significantly from that of 3D counterparts, offering new insights into the fundamental carrier transport behavior of these materials.
研究不足
The study is limited to phase-pure homologous 2D organolead halide perovskite single crystals with n = 1, 2, and 3. The influence of contact resistances on the carrier mobility is noted, suggesting potential areas for optimization in device fabrication.
1:Experimental Design and Method Selection:
Fabrication of 2D perovskite field effect transistors with high-quality exfoliated 2D perovskite bulk crystals. Measurement of characteristic output and transfer curves from individual single-crystal flakes with various n values under different temperatures.
2:Sample Selection and Data Sources:
Phase-pure homologous (n = 1, 2, and 3) Ruddelsden–Popper perovskite (RPP) (BA)2(MA)n?1PbnI3n+1 single crystals.
3:List of Experimental Equipment and Materials:
High-quality exfoliated 2D perovskite bulk crystals, field effect transistors.
4:Experimental Procedures and Operational Workflow:
Fabrication of FET devices, measurement of output and transfer curves under various temperatures.
5:Data Analysis Methods:
Extraction of carrier mobility values, analysis of temperature-dependent electrical transport and optical measurements.
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