研究目的
Investigating the formation and light-emitting properties of hexagonal 9R silicon phase through ion implantation into SiO2/Si substrates.
研究成果
The study successfully synthesized light-emitting hexagonal 9R-Si layers through ion implantation and annealing, demonstrating their potential for optoelectronic applications. The electronic band structure calculations confirmed the indirect-gap nature of 9R-Si and predicted the direct-gap property of 9R-Ge, suggesting broader applicability of the method to other semiconductors.
研究不足
The study is limited to the synthesis and characterization of 9R-Si layers under specific conditions of ion implantation and annealing. The compatibility of this method with traditional silicon technology and its scalability for industrial applications are not fully explored.
1：Experimental Design and Method Selection:
The study involved ion implantation of Kr+ ions into SiO2/Si substrates followed by annealing to form the 9R-Si phase. Cross-sectional transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy were used to characterize the samples.
2：Sample Selection and Data Sources:
(001) n-Si substrates with thermal SiO2 layers of varying thicknesses were used.
3：List of Experimental Equipment and Materials:
JEM-2100F microscope for TEM, Gatan
4：07000 TEM Specimen Preparation Kit, photodiode for PL excitation, Janis Research helium closed-loop cryostat for PL measurements. Experimental Procedures and Operational Workflow:
6 Samples were irradiated with Kr+ ions (80 keV, 5 × 10^16 cm^-2) and annealed at 800°C. TEM and PL measurements were conducted post-annealing.
5：Data Analysis Methods:
First-principles calculations using the density functional theory (DFT) method were performed to analyze the electronic band structure of 9R-Si and 9R-Ge.
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