研究目的
To optimize the operating parameters in a planetary CVD reactor for uniform film thickness using response surface methodology (RSM) based on computational fluid dynamics (CFD) simulation.
研究成果
The study successfully optimized the planetary CVD process parameters for uniform film thickness using RSM based on CFD simulation. The influences of susceptor temperature and mole fraction of DCS were the most significant parameters affecting silicon deposition uniformity. The RSM model was found to be in very good agreement with the CFD model, indicating its high accuracy for optimizing process parameters.
研究不足
The study focused on a specific total flow rate with hydrogen flow rate of 230 slm and did not include factors like H2 concentration or total flow rate. The simulation could be extended to include more factors for a comprehensive analysis.
1：Experimental Design and Method Selection:
RSM was used to investigate the influence of operating parameters on silicon deposition uniformity. A second-order model was adopted to predict relationships between parameters.
2：Sample Selection and Data Sources:
Twenty-five experimental points were generated to obtain the response of the system under different combinations of four process parameters.
3：List of Experimental Equipment and Materials:
A planetary CVD reactor with five silicon wafers mounted on satellites on the top surface of a graphite susceptor was used. The finite volume code Ansys Fluent V17.2 was used for simulations.
4：2 was used for simulations.
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The simulation included solving for continuity, momentum, energy, and chemical species. A hexahedral mesh with approximately 800,000 cells was used for the computational domain.
5：Data Analysis Methods:
Analysis of variance (ANOVA) was conducted to determine the statistical significance of each factor in an empirical equation for the expected response.
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