研究目的
Investigating the impact of phonon scattering modeling on hole transport in Si nanowires through high-field hole transport, focusing on boundary conditions and comparison with bulk phonon approximation.
研究成果
The boundary condition for phonons in Si nanowires has a strong impact on low-field hole mobility but less at high field. The energy relaxation time is almost independent of boundary conditions. The free boundary condition may be described by an acoustic phonon deformation potential about 25% larger than the quasi-bulk boundary condition. The study highlights the importance of considering energy relaxation by acoustic phonons in Si nanowires for describing energy relaxation processes crucial in scaled MOSFETs under quasi-ballistic regime.
研究不足
The approximation assuming elastic acoustic phonon and inelastic optical phonon scattering cannot reproduce the behavior of energy relaxation. The study suggests the importance of considering energy relaxation by acoustic phonons in Si nanowires for accurate description of energy relaxation processes.
