研究目的
To design and fabricate an aluminum nitride (AlN) based Piezoelectric Micromachined Ultrasonic Transducer (PMUT) for contact sensing applications.
研究成果
An AlN PMUT for contact sensing was successfully designed and fabricated, with detailed analysis of structural parameters' effects on performance. The fabricated device demonstrated desired characteristics, including a smooth AlN film surface and preferred crystal orientation.
研究不足
The fabricated device showed inconsistent resonant frequency measurements, possibly due to residual stresses or test environment errors.
1：Experimental Design and Method Selection:
The study involves the design of an AlN PMUT for contact sensing, utilizing DRIE Si process for creating a deep cavity to suspend the PMUT device layers.
2：Sample Selection and Data Sources:
A double side polished Si wafer with a thickness of 250μm is used as the substrate.
3：List of Experimental Equipment and Materials:
Equipment includes DRIE for Si etching, sputtering for AlN and Mo deposition, and ICP for via opening. Materials include Si, Mo, AlN, and Al.
4：Experimental Procedures and Operational Workflow:
The process involves depositing AlN and Mo layers, patterning electrodes, and etching a cavity to suspend the PMUT.
5：Data Analysis Methods:
Characterization includes AFM for surface roughness, XRD for crystal orientation, and impedance analysis for electromechanical coupling coefficient.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
