研究目的
To improve the photoelectric properties of N+ implanted TNTs (N-TNTs) using the method of combustion of graphene.
研究成果
The annealed G-N-TNTs exhibits 1.4 and 2.5 times higher photocurrent density as compared to the TNTs corresponding to visible light and UV light irradiation, respectively. With the combined effect of implantation and combustion of graphene, annealed G-N-TNTs showed stronger visible light absorption and low recombination rate of charge carriers than TNTs and N-TNTs photoanodes.
研究不足
The study focuses on the photoelectric properties of N-TNTs modified by combustion of graphene, but does not explore other potential modifications or applications in depth.
1：Experimental Design and Method Selection:
Nitrogen ions were implanted into Ti foils, which were then anodized with graphene in electrolyte to prepare graphene deposited N-TNTs (G-N-TNTs). The G-N-TNTs were annealed at 450 °C.
2：Sample Selection and Data Sources:
Ti foils were used as samples.
3：List of Experimental Equipment and Materials:
An implanter equipped with Kaufman ion source, FE-SEM, XRD, XPS, UV-Vis DRS, a standard three-electrode photoelectric cell, a 500 W high-pressure mercury lamp, and a 100 W household fluorescent lamp.
4：Experimental Procedures and Operational Workflow:
Nitrogen ion implantation, anodization with graphene, annealing, and characterization of samples.
5：Data Analysis Methods:
Characterization using FE-SEM, XRD, XPS, UV-Vis DRS, and transient photocurrent response.
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