研究目的
To fabricate anti-reflection inverted pyramidal cavities on dendrite-like textured silicon substrates using a combination of metal-assisted chemical etching (MacEtch) and anisotropic wet etching.
研究成果
The combined MacEtch and anisotropic wet etching technique successfully fabricated anti-reflection inverted pyramidal cavities on dendrite-like textured silicon substrates. The sample treated by MacEtch for 30 min and anisotropic wet etching for 1 min exhibited the lowest reflectance, making it promising for applications in sensors, solar cells, and energy storage.
研究不足
The study's limitations include the consumption of MacEtch-generated nanostructures with increasing anisotropic etching time and the need for judicial choice of etching treatments depending on the application.
1：Experimental Design and Method Selection:
The study employed a two-step wet etching process combining MacEtch and anisotropic wet etching to create anti-reflective structures on silicon substrates.
2：Sample Selection and Data Sources:
N-type (100)-oriented Czochralski (Cz) Si wafers were used.
3：List of Experimental Equipment and Materials:
Equipment included an E-beam evaporator for Ag deposition, SEM for morphology analysis, and UV–VIS-NIR spectrophotometer for reflectance measurements. Materials included Ag, HF, H2O2, NaOH, and IPA.
4：Experimental Procedures and Operational Workflow:
The process involved Ag film deposition, MacEtch to create etching holes, Ag removal, and anisotropic wet etching to form inverted pyramidal cavities.
5：Data Analysis Methods:
Reflectance spectra were analyzed to evaluate anti-reflection properties.
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