摘要： Here, we have elucidated the structural, optical, magnetic and electrical properties of Cd0.8Fe0.2S which is considered as diluted magnetic semiconductor (DMS). Cd0.8Fe0.2S materials were synthesized using co-precipitation (compound 1) and hydrothermal (compound 2) method. The particle size and the polycrystalline phase of the synthesized materials are significantly influenced by the synthesis procedures. Presence of anti-ferromagnetic coupling confirms the magnetic behavior of materials. The current-voltage (I-V) characteristics exhibit lower barrier height for the device based on compound 2 (0.59 eV) than the other device (0.64 eV). Furthermore, the 19 times enhanced mobility and lesser density of states near the Fermi level for the Al/compound 2/ITO configured device is enlightened by the space charge conduction mechanism. But, the interface resistances of the devices cannot be distinguished by the I-V characteristics. Therefore, we have tackled the problem by simulating the Nyquist plots obtained from impedance spectroscopy. We have fitted the Nyquist plots with the appropriate equivalent circuit and explained the mechanism of charge transport through the Schottky interface. The higher dc conductivity and lower relaxation time of diode fabricated by compound 2 confirm the outcomes obtained from I-V characteristics. The effect of particle size on charge transport was also analyzed.