研究目的
Investigating the wavelength-detection characteristics of organic phototransistors based on CHICZ single crystal.
研究成果
High performance CHICZ single crystal-based phototransistors were constructed, exhibiting high optoelectronic performances with photoresponsivity of 3×103 W cm?2, photosensitivity of 2×104 and detectivity D* of up to 8.4×1014 Jones. A good linear relationship for log(P) versus the light wavelength was observed, indicating its unique wavelength detection in optoelectronic devices.
研究不足
The study focuses on the wavelength-detection characteristics of CHICZ-based phototransistors, with potential limitations in the scalability of single crystal preparation and device fabrication processes.
1：Experimental Design and Method Selection:
High-quality CHICZ single crystals for phototransistors were prepared by physical vapor transport (PVT). Bottom-gate top-contacted organic field effect transistors (OFETs) based on the CHICZ crystals were constructed on the OTS-modified SiO2/Si substrates using 'organic ribbon mask' technique.
2：Sample Selection and Data Sources:
CHICZ powder was used to grow single crystals.
3：List of Experimental Equipment and Materials:
Quartz boat, tube furnace, SiO2 (300 nm)/Si substrate, orthotrichlorosilane (OTS), gold for electrodes.
4：Experimental Procedures and Operational Workflow:
The CHICZ powder was added to a quartz boat, which was laid on a heating zone in the tube furnace, and the tube furnace was heated to about 150°C for 3 h in vacuum. Single crystals of CHICZ were deposited directly on the substrate in the low temperature zone.
5：Data Analysis Methods:
Electrical and photoresponse properties were characterized by a Keithley (4200 SCS) semiconductor analyzer.
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