研究目的
Investigating the meso-kinetics of one-time relaxation electrical processes in BaTiO3 ceramics using a modified Boltzmann-Poisson model.
研究成果
The modified Boltzmann-Poisson model successfully describes the meso-kinetics of one-time relaxation electrical processes in BaTiO3 ceramics, including the varistor effect and fractal nature of electron motion. This approach provides a foundation for further research into transport processes in semiconductors.
研究不足
The study is limited to the approximation of one relaxation time and constant external electrical field. The model's applicability to other conditions or materials is not explored.
1：Experimental Design and Method Selection:
The study employs a modified Boltzmann-Poisson model to analyze the meso-kinetics of electrical processes in BaTiO3 ceramics, focusing on one relaxation time approximation and quantum corrections.
2：Sample Selection and Data Sources:
BaTiO3 samples doped with Er2O3, Yb2O3, Ho2O3 were prepared by a conventional solid state sintering procedure.
3：List of Experimental Equipment and Materials:
Scanning electron microscope, JEOL, SEM-5300 equipped by EDS system was used for microstructure investigation.
4：Experimental Procedures and Operational Workflow:
The samples were ball milled, dried, pressed into pellets, and sintered in air. Microstructure analysis was performed with SEM.
5：Data Analysis Methods:
The study uses fractal analysis and quantum corrected Boltzmann-Poisson model for data interpretation.
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