研究目的
Investigating the temperature-induced phase structural evolution and its correlation with piezoelectric responses in Ba(Ti0.92Sn0.08)O3 ceramic to design high-performance piezoelectrics.
研究成果
The piezoelectric performance associated with temperature-driven phase evolution in the BTS0.08 ceramic was systemically studied. Large weak-filed piezoelectricity of d33 = 675 pC/N occurs near T to C phase transition. The highest piezoelectric strain coefficients of dmax33 = 1170 pm/V, bipolar d*33 = 822 pm/V and unipolar d*33 = 1318 pm/V are obtained in the O-T phase boundary. Large enhancement in piezoelectric properties in temperature-driven phase transition comparable with composition-induced phase transition provides guidance for designing phase transition types with excellent piezoelectric performance.
研究不足
The study focuses on a specific composition of Ba(Ti0.92Sn0.08)O3 ceramic. The temperature stability of piezoelectric properties and the mechanisms behind the enhanced piezoelectric response near phase transitions need further investigation.
1:Experimental Design and Method Selection:
The Ba(Ti
2:92Sn08)O3 ceramic was prepared by the traditional solid-state synthesis route. High purity TiO2, SnO2 and BaCO3 powders were milled, calcined, pressed into disks, and sintered. Silver electrodes were pasted for electrical measurements. The poling process was performed under an electric field. Sample Selection and Data Sources:
The phase structure was analyzed by X-ray diffraction and Raman spectrum. The microstructure was investigated by FE-SEM and TEM. The piezoelectric coefficient d33 was characterized by a Berlincourt meter. The planar electromechanical coupling coefficient kp was measured by a precision impedance analyzer. A piezo-measurement system was employed for various ferroelectric and piezoelectric measurements.
3:List of Experimental Equipment and Materials:
X-ray diffraction (D8-2-Advance, Bruker AXS, Germany), Raman spectrum (Lab RAM HR Evolution, Horiba JY, France), FE-SEM (JSM-7500, Japan), TEM (Tecnai G2 F20 S-TWIN), Berlincourt meter (ZJ-3A, China), impedance analyzer (HP 4294A, Agilent, USA), piezo-measurement system (TF Analyzer, 2000HS, aix ACCT Systems GmbH, Aachen, Germany).
4:Experimental Procedures and Operational Workflow:
The samples were prepared, sintered, and characterized for their structural, microstructural, and piezoelectric properties. The temperature dependence of dielectric properties was examined.
5:Data Analysis Methods:
The data were analyzed to understand the phase transitions and their effects on piezoelectric properties.
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Precision impedance analyzer
HP 4294A
Agilent
Measuring the planar electromechanical coupling coefficient kp
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X-ray diffraction
D8-2-Advance
Bruker AXS
Analyzing the phase structure of the ceramic
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Raman spectrum
Lab RAM HR Evolution
Horiba JY
Measuring the Raman spectrum of the ceramic
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Field emission-scanning electron microscopy
JSM-7500
Japan
Investigating the microstructure of the sintered ceramic
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Transmission electron microscope
Tecnai G2 F20 S-TWIN
TEM observation of the ceramic
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Berlincourt meter
ZJ-3A
China
Characterizing the longitudinal piezoelectric coefficient d33
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Piezo-measurement system
TF Analyzer, 2000HS
aix ACCT Systems GmbH
Employed for various ferroelectric and piezoelectric measurements
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