研究目的
Investigating the electrical and spectroscopic characteristics of sol–gel processed ultrathin SnO2 semiconductor thin ?lms on thermally grown SiO2/Si substrates to understand the transport mechanism and control the current flow.
研究成果
The study demonstrated that the optical energy bandgap and electron affinity of sol–gel-processed SnO2 films are affected by the quantum confinement effect and Burstein–Moss effect. Thinner SnO2 layers resulted in increased barrier height between Au and SnO2, enhancing Schottky diode characteristics. This research contributes to the understanding of carrier transport mechanisms in quantum confined SnO2 semiconductor-based devices.
研究不足
The study is limited to sol–gel-processed SnO2 films with thicknesses varying from 3.5 to 5.0 nm. The effects of other fabrication methods or materials on the Schottky diode characteristics were not explored.
1：Experimental Design and Method Selection:
The study involved depositing sol–gel-processed SnO2 films with varying thicknesses by controlling the concentration of precursor solutions. The films were then analyzed for their electrical and spectroscopic characteristics.
2：Sample Selection and Data Sources:
SnCl2 sol–gel precursor was used, with three concentrations prepared (
3：030 M, 025 M, and 020 M). The films were spin-coated on SiO2/Si substrates. List of Experimental Equipment and Materials:
Equipment included a LAMBDA 265 UV/Vis spectrophotometer, Ecopia HMS-5000 Variable Temperature Hall Effect Measurement System, and a Keithley 2636B semiconductor analyzer. Materials included SnCl2·2H2O precursor, ethanol, and SiO2/Si substrates.
4：Experimental Procedures and Operational Workflow:
The SnCl2 solution was spin-coated, dried, and sintered. The films were then characterized using GIXRD, TEM, UV/Vis spectrophotometry, and Hall effect measurements.
5：Data Analysis Methods:
The optical bandgap was estimated using the absorption coefficient, and the Schottky barrier height and ideality factor were extracted by curve fitting.
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