研究目的
To decrease the temperature at which metallic yttrium (Y) reacts with H2 to form the semiconductor trihydride phase.
研究成果
Pt capping layers, especially with 5 nm thickness, significantly lower the temperature required for the formation of the trihydride phase of yttrium, achieving approximately 100% molar concentration at 150 – 200°C. The thermodynamic analysis suggests a unique mechanism in the hydrogen-yttrium system, with enthalpy and entropy differences showing sign inversions at similar temperatures.
研究不足
The study focuses on the effect of Pt capping layers on the formation of the trihydride phase at low temperatures. The comparison with other catalysts (Pd, Ni) provides insights but may not cover all potential catalytic materials. The thermodynamic analysis is based on the assumption of ideal mixture behavior.
1：Experimental Design and Method Selection:
Employed Pt capping layers as catalysts to decrease the reaction temperature of metallic yttrium with H2 to form the semiconductor trihydride phase. Compared results with those obtained using Pd, Ni, or their co-capping layers.
2：Sample Selection and Data Sources:
Prepared Pt capped Y-films with different Pt thicknesses and the same Y thickness by electron beam evaporation. Hydrogenated films were characterized by XRD.
3：List of Experimental Equipment and Materials:
ULVAC EX-550-D10 evaporation system for film deposition, RIGAKU Ultima III diffractometer for XRD measurements.
4：Experimental Procedures and Operational Workflow:
Films were grown on quartz glass substrates by electron beam evaporation. Hydrogenation was performed under a continuous flow of atmospheric Ar gas including H2 of 3%.
5：3%.
Data Analysis Methods:
5. Data Analysis Methods: Molar concentrations of phases were assessed from XRD intensities, which are proportional to the volume of phase present in the films.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
