研究目的
Investigating the design and implementation of a high linearity full differential 8 GSa/s track-and-hold amplifier (THA) using 2-μm GaAs HBT technology for faster operation in sampling systems at a clock frequency of GHz.
研究成果
This work has developed a high linearity 8 GSa/s sampling rate track and hold amplifier using the GaAs HBT technology, which demonstrates relatively wide bandwidth and high linearity performance. Schottky diodes are used as the switching elements of THA to achieve a high hold–mode isolation and a high–speed operation. A low distortion input buffer is discussed and well-designed with a nonlinear analysis. The eventual measured results demonstrate a high sampling rate, a wide dynamic range, a good linearity and a relatively wide input bandwidth, compared with the prior art.
研究不足
The prototype is implemented in 2-μm GaAs HBT technology, which may have limitations compared to more advanced technologies like InP, SiGe, and advanced CMOS processes.
1：Experimental Design and Method Selection:
The THA is designed using an alternative switch emitter follower (SEF) as a switching stage with a Schottky diode for hold-mode isolation enhancement and high–speed operation.
2：Sample Selection and Data Sources:
The prototype is implemented in 2-μm GaAs HBT technology.
3：List of Experimental Equipment and Materials:
Schottky diodes, GaAs HBTs, and feedthrough compensation capacitors are used.
4：Experimental Procedures and Operational Workflow:
The THA is measured via on-wafer with 150μm spacing Infinity GSGSG dual probing arms. S-parameters are measured using Agilent PNA-X N5247A Four-port Network Analyzer. The linearity and dynamic characterization have been carried out with a continuous-wave signal using two Agilent E8257D analog signal generators and AV4051 Signal Analyzer.
5：Data Analysis Methods:
The spectral behavior of this THA has been evaluated with fast Fourier transformations (FFTs) in MATLAB for more features, such as THD, SNDR, SNR, etc.
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