研究目的
Investigating the effects of strategically placed water droplets on the monolayer growth of molybdenum disulfide (MoS2) by chemical vapor deposition to improve reproducibility and quality of large-area MoS2 films.
研究成果
The study demonstrates that controlled amounts of water vapor in strategic locations in the growth region affect the partial pressure of MoO3 precursor, leading to different growth patterns of MoS2. This simplified growth technique can be used for large-area growth of MoS2 monolayers for device development.
研究不足
The study highlights the challenges in terms of reproducibility, areal coverage, film quality, and interdependent experimental parameters. The exact mechanism of the dependence of water droplet positioning on substrates and its interaction with MoO3 vapor are subjects of future study.
1：Experimental Design and Method Selection:
The study used chemical vapor deposition (CVD) with MoO3 and S as source materials, introducing controlled amounts of water vapor into the system before growth.
2：Sample Selection and Data Sources:
Si substrates with water droplets of measured volume placed on their surface were used.
3：List of Experimental Equipment and Materials:
SEM (Hitachi-SU1510), Raman spectrometer (Almega XR), AFM (Veeco Nanoscope III), MoO3 powder (≥
4：5%, Alfa Aesar), sulfur powder (≥5%, Alfa Aesar). Experimental Procedures and Operational Workflow:
Substrates were cleaned and treated with water droplets before loading into the growth chamber. Growth was carried out at atmospheric pressure with argon flow.
5：Data Analysis Methods:
The morphology and dimensions of the MoS2 samples were studied using SEM, Raman spectroscopy, and AFM.
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