摘要： MoS2 based hybrid structures have much attention due to their novel structures and potential applications in diverse areas, such as solar energy conversion, thermoelectric power generation and photo-transistors. In the present work, we have fabricated a novel sandwich structure of MoS2/InSe-nano-particles (NPs)/MoS2 layers on SiO2/Si substrate by a combination of chemical vapor deposition and physical vapor deposition methods. The morphology of these structures was also studied using scanning electron microscopy. In addition, we have also explored the thermal properties of these hybrid sandwich structures using temperature and power-dependent Raman spectroscopy. For MoS2/InSe-NPs/MoS2 sample, the first-order temperature coefficients of E1 2g and A1g modes were found to be (cid:1)0.01722 (cid:1)1/K, respectively, which are significantly large compared to MoS2 layers without InSe- and (cid:1)0.01575 cm NPs (i.e. MoS2/MoS2 sample). Further, the thermal conductivity of MoS2/InSe-NPs/MoS2 and MoS2/MoS2 samples on SiO2/Si substrate was extracted as ~102.3 and ~81.7 W/m-K, respectively. This work suggests an effective way to form a novel 2D-MoS2 based sandwich structure with semiconductor/metal-NPs; opening up a new scenario to understand the electronic structure of the hybrid structure, and the local strain introduced by NPs. Electron-phonon interactions at an interface can have significant effects on electrical/thermal transport through the optoelectronic devices.