研究目的
Investigating the band gap engineering by incorporating bismuth into GaAs to form ternary GaAs1-xBix alloy for long wavelength optoelectronic applications.
研究成果
The incorporation of Bi into GaAs reduces the band gap of GaAs1-xBix, attributed to the reduction of the conduction band minimum and the increase of the valence band maximum. Room temperature PL peak wavelength of up to 1.5 μm was achieved, demonstrating GaAs1-xBix alloy's potential for long wavelength optoelectronic applications.
研究不足
The study is limited by the significant alloy fluctuation and Bi clustering which result in large PL FWHM, indicating potential issues with material quality and uniformity.
1：Experimental Design and Method Selection:
The study involved growing series of GaAsBi samples with different Bi concentrations by molecular beam epitaxy. The structural and optical properties were assessed using high resolution X-ray diffraction (HR-XRD) and room temperature photoluminescence (PL) measurements.
2：Sample Selection and Data Sources:
GaAsBi samples were grown on undoped GaAs substrate. The samples consisted of a GaAs buffer layer, followed by 25-50 nm of GaAs1-xBix layer and then capped with 50 nm of GaAs.
3：List of Experimental Equipment and Materials:
Molecular beam epitaxy system, high resolution X-ray diffraction (HR-XRD) equipment, continuous wave 532 nm green laser, germanium detector.
4：Experimental Procedures and Operational Workflow:
The growth temperature was varied between 400 – 320 oC to increase the incorporation of Bi into GaAs. HR-XRD θ-2θ scans were carried out to verify Bi incorporation and assess structural quality. Room temperature PL was measured using a 532 nm green laser and detected by a germanium detector.
5：Data Analysis Methods:
HR-XRD data fitting using RADS Mercury software was carried out to determine Bi concentration. The PL emission was analyzed to determine peak wavelength and FWHM.
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