研究目的
Investigating the evolution of the recrystallization phase in amorphous 6H-SiC formed by He implantation followed by thermal annealing.
研究成果
The study demonstrates that impurity atoms play a significant role in the recrystallization of amorphous SiC, with the formation of different poly-types affecting the material's electronic properties. Further investigation into the influence of impurity atoms on epitaxial growth is suggested.
研究不足
The study is limited to the effects of He implantation and thermal annealing on 6H-SiC. The influence of other implantation conditions or materials is not explored.
1：Experimental Design and Method Selection:
The study involves He implantation into 6H-SiC wafers followed by thermal annealing. Microstructures are characterized using XTEM and HRTEM.
2：Sample Selection and Data Sources:
6H-SiC wafers oriented ?0001? were implanted with He+ ions at 15 keV and a fluence of 3.5×1016 cm?2 at RT.
3：5×1016 cm?2 at RT.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Tecnai G20 TEM operated at 200 kV, equipped with a double tilt goniometer stage.
4：Experimental Procedures and Operational Workflow:
Post-implantation, wafers were annealed at 900°C and 1000°C for 30 min in a vacuum. Microstructural evolution was investigated via TEM.
5：Data Analysis Methods:
HRTEM with a point-to-point resolution of 0.19 nm was used to identify lattice disorders.
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