研究目的

Investigating the optical properties of Ni(II) and Mn(II) doped ZnTe nanobelt/nanorod prepared by chemical vapor deposition (CVD) and their potential applications in spintronics and spin-controlled switching devices.

研究成果

Mn and Ni doped ZnTe nanostructures are typical DMS, which exhibits bandgap renormalization due to electron–hole plasma effect at room temperature, this prove the carrier–spin interactions account for their ferromagnetic properties. Ferromagnetic properties of Zn1?xMnxTe and Zn1?xNixTe also depend on the doping concentration of Mn and Ni that have influenced on electron–hole plasma profile. High concentration of transition metal ions doping indicate strong coupling between holes and localized spin that reduces the redshift in doped ZnTe. This indicated the carrier correlation take action at high doping. The polarized PL results indicate the strain dependence of band splitting energy for Zn1?xMnxTe and Zn1?xNixTe. Experimental and theoretical values of the band split energy of Mn doped ZnTe lattice are in strong agreement. We also identified that the theoretical value (4.51 meV) of Ni doped band split energy is higher than that of experimental value (2.67 meV), the lattice may be due to its small ionic size and ionicity (Phillips ionicity model) as well as higher electron–electron correlation. Photoionisation of Ni ions with light interaction create a free hole in near top of valance band might be another reasoning for low band splitting value. We believe the successful fabrication of Zn1?xMnxTe and Zn1?xNixTe by using CVD will open new horizon for DMS study and application.

研究不足

The study is limited to the optical properties of Ni(II) and Mn(II) doped ZnTe nanostructures prepared by CVD. The magnetic properties and potential device applications are not extensively explored. The doping concentration and uniformity could affect the reproducibility and scalability of the results.