研究目的
To synthesize and characterize hexagonal BGaN alloys and quantum wells for tuning optoelectronic properties and expanding applications of h-BN.
研究成果
Successfully synthesized BN-rich layer-structured h-B1?xGaxN alloys and QWs via MOCVD, enabling electrical conductivity control and heterojunction formation. Further research is needed to address Ga composition saturation and material quality improvement.
研究不足
Limited Ga incorporation due to high growth temperature and possible miscibility gap; phase separation and critical thickness issues need further investigation.
1：Experimental Design and Method Selection:
Utilized h-BN epilayer as a template for the synthesis of BN-rich B1?xGaxN alloys and quantum wells via metal organic chemical vapor deposition (MOCVD).
2：Sample Selection and Data Sources:
Samples were grown on c-plane sapphire substrates with varying TMGa flow rates to control alloy composition.
3：List of Experimental Equipment and Materials:
Triethylboron (TEB), ammonia (NH3), and trimethylgallium (TMGa) as precursors; hydrogen as a carrier gas; X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) for characterization.
4：Experimental Procedures and Operational Workflow:
Growth of h-BN template at ~1350°C followed by h-BGaN alloy growth at 1225°C; characterization of crystalline structure and atomic compositions.
5：Data Analysis Methods:
XRD for crystalline structure; XPS for atomic compositions; photoluminescence (PL) measurements for optical properties.
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