研究目的
Investigating the performance of InGaN double channel high electron mobility transistors (HEMTs) with a focus on the coupling effect between channels and their potential for high power and high bandwidth applications.
研究成果
The InGaN DC HEMTs demonstrate superior performance, including a strong coupling effect between channels, high linearity, low leakage, and high on/off ratio, indicating their great potential for high power and high bandwidth applications.
研究不足
The study notes that the source-drain distance and Ohmic contact resistance could be optimized to further improve the current carrying capacity. The thermal conductivity of the sapphire substrate also limits performance at high current levels.
1：Experimental Design and Method Selection:
The study involves the fabrication and systematic investigation of InGaN DC HEMTs to explore their performance characteristics, including the coupling effect between channels.
2：Sample Selection and Data Sources:
InGaN DC HEMTs were prepared on as-grown InAlN/InGaN/InAlN/InGaN heterostructures.
3：List of Experimental Equipment and Materials:
The fabrication process included etching, deposition of metal stacks for Ohmic contacts, and deposition of a passivation layer and gate electrode.
4：Experimental Procedures and Operational Workflow:
The process involved etching the Ohmic contact area, depositing and annealing metal stacks for electrodes, depositing a SiN passivation layer, etching a gate-trench, and depositing a gate electrode.
5：Data Analysis Methods:
The performance of the HEMTs was evaluated through dc output characteristics, transfer characteristics, gate leakage characteristics, pulsed and small signal characteristics, and breakdown characteristics.
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