研究目的
To show how the performance of ZnSe nanowire devices improves when nanowires are subjected to a post-growth anneal treatment in a zinc-rich atmosphere.
研究成果
The post-growth anneal in a zinc-rich atmosphere improves the performance of single ZnSe NWFETs, increasing the NBE/DL emission ratio, electrical conductivity, and carrier mobility by more than an order of magnitude. This improvement is attributed to the reduction in the concentration of zinc vacancies, which are responsible for strong compensation and high amounts of scattering in the as-grown nanowires.
研究不足
The study is limited by the need for further studies to explicitly solve for the donor and acceptor concentrations independent of the compensation ratio. Additionally, the nonlinear dependence of scattering times on energy and the distribution of defect levels in the gap complicate the analysis.
1：Experimental Design and Method Selection:
The study involved the synthesis of ZnSe nanowires by the vapor phase growth method, catalyzed by Au-droplets and the vapor-liquid-solid mechanism. Post-growth annealing in a zinc-rich environment was performed to improve the crystallinity.
2：Sample Selection and Data Sources:
ZnSe nanowires were grown on silicon (111) substrates. After growth, half of the substrate was subjected to a post-growth anneal in a zinc-rich environment.
3：List of Experimental Equipment and Materials:
Equipment included a Philips XRD system, Quanta 250 SEM, Coherent MIRA-900F Ti:Sapphire oscillator, Jobin-Yvon TRIAX 320 spectrometer, and a liquid-nitrogen cooled Si-based CCD detector. Materials included ZnSe powder (
4：997% purity), isopropyl alcohol, and Ti/Au for contacts. Experimental Procedures and Operational Workflow:
The nanowires were characterized using XRD and SEM. Optical characterization was performed using low-temperature photoluminescence spectroscopy. Electrical characterization involved fabricating and measuring the properties of ZnSe nanowire field-effect transistors.
5：Data Analysis Methods:
The data was analyzed using Boltzmann transport theory to understand the enhancement in electrical conductivity and mobility after annealing.
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Quanta 250 SEM
250
Thermo Fisher Scientific
Structural characterization
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Coherent MIRA-900F Ti:Sapphire oscillator
MIRA-900F
Coherent
Excitation source for photoluminescence spectroscopy
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Keithley 647 electrometer
647
Keithley
Sourcing current across the outer contacts
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Agilent Infiniium high-impedance oscilloscope
Infiniium
Agilent
Measuring the voltage drop between the inner two contacts
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Philips XRD system
Philips
Structural characterization
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Jobin-Yvon TRIAX 320 spectrometer
TRIAX 320
Jobin-Yvon
Dispersing the signal for photoluminescence spectroscopy
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liquid-nitrogen cooled Si-based CCD detector
Detection of photoluminescence signal
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Hewlett–Packard 4140B picoammeter
4140B
Hewlett–Packard
Measuring the drain-to-source current
-
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