摘要： We succeed in synthesizing large-area single-layer graphene sheets with different grain size using C2H2 chemical vapor deposition process. Our graphene shows high uniformity and low sheet resistance to 1080Ω/□. By fabricating graphene-based field effect transistors (FETs), the relation between the nucleation density and the electronic properties of CVD graphene are investigated. We found that the nucleation density can severely affect the defects formation in graphene, leading to the change in the electronic properties of graphene. We also check the strain sensitivity of CVD graphene. The as-grown graphene/Cu film was fixed onto the SiO2/Si substrate with a double-sided tape. The strain device is fabricated directly on the graphene-coated Cu standard photolithography and reactive ion etching (RIE) process. Then the device is transferred onto a stretchable and flexible polydimethysiloxane (PDMS) substrate. By using a motorized stage, the piezoresistive properties of graphene-based strain sensors. The one-dimensional tensile test is performed to investigate the piezoresistive properties. A gauge factor 3.4 was achieved under the tensile deformation.