研究目的
To research the contact mechanism and high performance thin film transistor, the IGZO/SiOC transistors were observed by the I–V curves to obtain the effect of Schottky contact.
研究成果
The Schottky contact can improve the performance of a semiconductor by preventing leakage currents and increasing the switching properties of the IGZO/SiOC TFTs. The transfer characteristics of the IGZO/SiOC TFT displayed the ambipolar properties with high performance depending on the reduction of drain bias voltages. The mobility of TFTs was increased by the tunneling phenomenon due to the diffusion current through very high Schottky barrier.
研究不足
The study is limited to the analysis of Schottky contact and tunneling phenomenon in IGZO thin film transistors prepared on SiOC with various annealing temperatures. The research does not explore other materials or annealing conditions.
1：Experimental Design and Method Selection:
The study involved preparing IGZO thin film transistors on SiOC with various annealing temperatures to investigate the Schottky contact and tunneling phenomenon.
2：Sample Selection and Data Sources:
The SiOC on a p-type Si substrate were deposited by rf magnetron sputtering system with oxygen gas flow rates of 24 sccm, and annealed at 100 °C to 400 °C in a vacuum for 10 minutes.
3：List of Experimental Equipment and Materials:
RF magnetron sputtering system, semiconductor parameter analyzer, MIS structure.
4：Experimental Procedures and Operational Workflow:
The electrical leakage currents for the films were measured by the semiconductor parameter analyzer at 1 MHz using MIS structure.
5：Data Analysis Methods:
The contact properties at the interface between the IGZO and SiOC films were analyzed.
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