研究目的
Investigating the fabrication of an InGaN light-emitting diode (LED) with an embedded porous GaN reflector and a current confined aperture for potential applications in nitride-based resonance cavity light sources.
研究成果
The study successfully fabricated an InGaN LED structure with an embedded porous GaN reflector and a current-confined aperture through electrochemical etching and PEC oxidation processes. The PEC-LED structure demonstrated localized EL emission intensity in the central mesa region, indicating potential for nitride-based resonant-cavity LED device applications.
研究不足
The study does not discuss the long-term stability or scalability of the fabricated LED structures for industrial applications.
1：Experimental Design and Method Selection:
The study involved transforming eight pairs of n+-GaN:Si/GaN stack structures into a conductive porous GaN/GaN reflector through an electrochemical wet-etching process, followed by transforming the porous GaN layers into insulating GaOx layers through a photoelectrochemical (PEC) oxidation process.
2：Sample Selection and Data Sources:
The LED epitaxial layer consisted of various GaN and InGaN layers grown at specific temperatures and doping concentrations.
3：List of Experimental Equipment and Materials:
A triple frequency ultraviolet Nd:YVO4 laser, a
4：5 M nitride acid solution, a 400 W Hg lamp, and deionized water were used. Experimental Procedures and Operational Workflow:
The samples underwent laser scribing, dry etching, electrochemical etching, and PEC oxidation processes.
5：Data Analysis Methods:
Electroluminescence (EL) spectra and light intensity profiles were measured using an optical spectrum analyzer and a beam profiler.
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